A platform for research: civil engineering, architecture and urbanism
Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement
Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement
Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement
Morin, P. (author) / Ortolland, C. (author) / Mastromatteo, E. (author) / Chaton, C. (author) / Arnaud, F. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 215-219
2006-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
British Library Online Contents | 2014
|Self-Aligned N+ Polysilicon-Gate GaN MOSFETs
British Library Online Contents | 2004
|Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier
British Library Online Contents | 2004
|TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
British Library Online Contents | 2002
|