Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability: Fid-Bau Portal

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Florentin, M. / Alexandru, M. / Constant, A. / Schmidt, B. / Millan, J. / Godignon, P.

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Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Florentin, M. / Alexandru, M. / Constant, A. / Schmidt, B. / Millan, J. / Godignon, P.

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Florentin, M. / Alexandru, M. / Constant, A. / Schmidt, B. / Millan, J. / Godignon, P.

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Check availability in my library

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Document information

Title:

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

Contributors:

Florentin, M. (author) / Alexandru, M. (author) / Constant, A. (author) / Schmidt, B. (author) / Millan, J. (author) / Godignon, P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 525-528

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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