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Spectroscopic techniques for characterization of high-mobility strained-Si CMOS

Schmidt, J. / Vogg, G. / Bensch, F. / Kreuzer, S. / Ramm, P. / Zollner, S. / Liu, R. / Wennekers, P.

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Spectroscopic techniques for characterization of high-mobility strained-Si CMOS

Schmidt, J. / Vogg, G. / Bensch, F. / Kreuzer, S. / Ramm, P. / Zollner, S. / Liu, R. / Wennekers, P.

Spectroscopic techniques for characterization of high-mobility strained-Si CMOS

Schmidt, J. / Vogg, G. / Bensch, F. / Kreuzer, S. / Ramm, P. / Zollner, S. / Liu, R. / Wennekers, P.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Spectroscopic techniques for characterization of high-mobility strained-Si CMOS

Contributors:

Schmidt, J. (author) / Vogg, G. (author) / Bensch, F. (author) / Kreuzer, S. (author) / Ramm, P. (author) / Zollner, S. (author) / Liu, R. (author) / Wennekers, P. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 267-271

Publication date:

2005-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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