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    Radiation damage in electron-irradiated strained Si n-MOSFETs

    New search for: Takakura, K.
    New search for: Ohyama, H.
    New search for: Hayama, K.
    New search for: Aoki, Y.
    New search for: Eneman, G.
    New search for: Verheyen, P.
    New search for: Simoen, E.
    New search for: Loo, R.
    New search for: Claeys, C.

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    Radiation damage in electron-irradiated strained Si n-MOSFETs

    New search for: Takakura, K.
    New search for: Ohyama, H.
    New search for: Hayama, K.
    New search for: Aoki, Y.
    New search for: Eneman, G.
    New search for: Verheyen, P.
    New search for: Simoen, E.
    New search for: Loo, R.
    New search for: Claeys, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Radiation damage in electron-irradiated strained Si n-MOSFETs

    New search for: Takakura, K.
    New search for: Ohyama, H.
    New search for: Hayama, K.
    New search for: Aoki, Y.
    New search for: Eneman, G.
    New search for: Verheyen, P.
    New search for: Simoen, E.
    New search for: Loo, R.
    New search for: Claeys, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Radiation damage in electron-irradiated strained Si n-MOSFETs

    Contributors:

    Takakura, K. (author) / Ohyama, H. (author) / Hayama, K. (author) / Aoki, Y. (author) / Eneman, G. (author) / Verheyen, P. (author) / Simoen, E. (author) / Loo, R. (author) / Claeys, C. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 732-736

    Publication date:

    2006-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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