Formation of silicon on plasma synthesized SiOxNy and reaction mechanism: Fid-Bau Portal

Formation of silicon on plasma synthesized SiOxNy and reaction mechanism

Zhu, M. / Shi, X. / Chen, P. / Liu, W. / Wong, M. / Lin, C. / Chu, P. K.

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Formation of silicon on plasma synthesized SiOxNy and reaction mechanism

Zhu, M. / Shi, X. / Chen, P. / Liu, W. / Wong, M. / Lin, C. / Chu, P. K.

Formation of silicon on plasma synthesized SiOxNy and reaction mechanism

Zhu, M. / Shi, X. / Chen, P. / Liu, W. / Wong, M. / Lin, C. / Chu, P. K.

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Check availability in my library

Order at Subito €

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Document information

Title:

Formation of silicon on plasma synthesized SiOxNy and reaction mechanism

Contributors:

Zhu, M. (author) / Shi, X. (author) / Chen, P. (author) / Liu, W. (author) / Wong, M. (author) / Lin, C. (author) / Chu, P. K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 243 ; 91-97

Publication date:

2005-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Electrical behaviour of SiOxNy thin films and correlation with structural defects

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