J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oC: Fid-Bau Portal

J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oC

Bergamini, F. / Rao, S. P. / Saddow, S. E. / Nipoti, R.

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J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oC

Bergamini, F. / Rao, S. P. / Saddow, S. E. / Nipoti, R.

J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oC

Bergamini, F. / Rao, S. P. / Saddow, S. E. / Nipoti, R.

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Check availability in my library

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Title:

J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oC

Contributors:

Bergamini, F. (author) / Rao, S. P. (author) / Saddow, S. E. (author) / Nipoti, R. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 629-632

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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