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Reduction of Fluoride Species and Surface Roughness by H~2 Gas Addition in SiC Dry Etching
Reduction of Fluoride Species and Surface Roughness by H~2 Gas Addition in SiC Dry Etching
Reduction of Fluoride Species and Surface Roughness by H~2 Gas Addition in SiC Dry Etching
Mikami, H. (author) / Horie, Y. (author) / Hatayama, T. (author) / Yano, H. (author) / Uraoka, Y. (author) / Fuyuki, T. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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