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Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Conde, J. C. / Gonzalez, P. / Lusquinos, F. / Chiussi, S. / Serra, J. / Leon, B.

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Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Conde, J. C. / Gonzalez, P. / Lusquinos, F. / Chiussi, S. / Serra, J. / Leon, B.

Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Conde, J. C. / Gonzalez, P. / Lusquinos, F. / Chiussi, S. / Serra, J. / Leon, B.

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Check availability in my library

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Document information

Title:

Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser

Contributors:

Conde, J. C. (author) / Gonzalez, P. (author) / Lusquinos, F. (author) / Chiussi, S. (author) / Serra, J. (author) / Leon, B. (author)

Published in:

APPLIED SURFACE SCIENCE ; 248 ; 461-465

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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