A platform for research: civil engineering, architecture and urbanism
Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
Skarlatos, D. (author) / Tsamis, C. (author) / Perego, M. (author) / Fanciulli, M. (author) / Tsoukalas, D. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 314-318
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Oxidation of very low energy nitrogen-implanted strained-silicon
British Library Online Contents | 2006
|British Library Online Contents | 2017
|Injection of point defects during annealing of low energy As implanted silicon
British Library Online Contents | 2005
|Defect Profiling with Low Energy Positrons of Nitrogen Implanted Silicon
British Library Online Contents | 1997
|Oxidation of ion implanted silicon carbide
British Library Online Contents | 2001
|