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    Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces

    New search for: Ravichandran, K.
    New search for: Windl, W.

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    Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces

    New search for: Ravichandran, K.
    New search for: Windl, W.

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    Access via TIB
    Check availability in my library
    Order at Subito €

    Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces

    New search for: Ravichandran, K.
    New search for: Windl, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Title:

    Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces

    Contributors:

    Ravichandran, K. (author) / Windl, W. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 359-362

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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