A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs

Lee, S. G. / Kim, Y. P. / Lee, H. L. et al. | British Library Online Contents | 2005

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. et al. | British Library Online Contents | 2006

Selective epitaxial growth of strained SiGe/Si for optoelectronic devices

Vescan, L. / Stoica, T. / Goryll, M. et al. | British Library Online Contents | 1998

Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Meinerzhagen, B. / Jungemann, C. / Neinhus, B. et al. | British Library Online Contents | 2004

Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

Olsen, S. H. / O'Neill, A. G. / Norris, D. J. et al. | British Library Online Contents | 2004