1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor: Fid-Bau Portal

1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor

Zhang, J. H. / Wu, J. / Alexandrov, P. / Burke, T. / Sheng, K. / Zhao, J. H.

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1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor

Zhang, J. H. / Wu, J. / Alexandrov, P. / Burke, T. / Sheng, K. / Zhao, J. H.

1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor

Zhang, J. H. / Wu, J. / Alexandrov, P. / Burke, T. / Sheng, K. / Zhao, J. H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor

Contributors:

Zhang, J. H. (author) / Wu, J. (author) / Alexandrov, P. (author) / Burke, T. (author) / Sheng, K. (author) / Zhao, J. H. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 1417-1420

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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