Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices: Fid-Bau Portal

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices

Sumakeris, J. J. / Bergman, J. P. / Das, M. K. / Hallin, C. / Hull, B. A. / Janzen, E. / Lendenmann, H. / O Loughlin, M. J. / Paisley, M. J. / Ha, S.

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Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices

Sumakeris, J. J. / Bergman, J. P. / Das, M. K. / Hallin, C. / Hull, B. A. / Janzen, E. / Lendenmann, H. / O Loughlin, M. J. / Paisley, M. J. / Ha, S.

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices

Sumakeris, J. J. / Bergman, J. P. / Das, M. K. / Hallin, C. / Hull, B. A. / Janzen, E. / Lendenmann, H. / O Loughlin, M. J. / Paisley, M. J. / Ha, S.

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Title:

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V~f Drift in SiC Bipolar Power Devices

Contributors:

Sumakeris, J. J. (author) / Bergman, J. P. (author) / Das, M. K. (author) / Hallin, C. (author) / Hull, B. A. (author) / Janzen, E. (author) / Lendenmann, H. (author) / O Loughlin, M. J. (author) / Paisley, M. J. (author) / Ha, S. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 141-146

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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