Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf~6Ta~2O~1~7 gate dielectrics: Fid-Bau Portal

Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf~6Ta~2O~1~7 gate dielectrics

Triyoso, D. H. / Yu, Z. / Gregory, R. / Moore, K. / Fejes, P. / Schauer, S.

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Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf~6Ta~2O~1~7 gate dielectrics

Triyoso, D. H. / Yu, Z. / Gregory, R. / Moore, K. / Fejes, P. / Schauer, S.

Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf~6Ta~2O~1~7 gate dielectrics

Triyoso, D. H. / Yu, Z. / Gregory, R. / Moore, K. / Fejes, P. / Schauer, S.

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Check availability in my library

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Document information

Title:

Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf~6Ta~2O~1~7 gate dielectrics

Contributors:

Triyoso, D. H. (author) / Yu, Z. (author) / Gregory, R. (author) / Moore, K. (author) / Fejes, P. (author) / Schauer, S. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 22 ; 2856-2862

Publication date:

2007-01-01

Size:

7 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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