Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition: Fid-Bau Portal

Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Chesnokov, Y. M. / Miakonkikh, A. V. / Rogozhin, A. E. / Rudenko, K. V. / Vasiliev, A. L.

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Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Chesnokov, Y. M. / Miakonkikh, A. V. / Rogozhin, A. E. / Rudenko, K. V. / Vasiliev, A. L.

Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Chesnokov, Y. M. / Miakonkikh, A. V. / Rogozhin, A. E. / Rudenko, K. V. / Vasiliev, A. L.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition

Contributors:

Chesnokov, Y. M. (author) / Miakonkikh, A. V. (author) / Rogozhin, A. E. (author) / Rudenko, K. V. (author) / Vasiliev, A. L. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 53 ; 7214-7223

Publication date:

2018-01-01

Size:

10 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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