Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition: Fid-Bau Portal

Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

Swain, B. P. / Hwang, N. M.

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Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

Swain, B. P. / Hwang, N. M.

Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

Swain, B. P. / Hwang, N. M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Study of structural and electronic environments of hydrogenated amorphous silicon carbonitride (a-SiCN:H) films deposited by hot wire chemical vapor deposition

Contributors:

Swain, B. P. (author) / Hwang, N. M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 5319-5322

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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