Influence of Boron-doping on Electrical Properties of na-Si:H Thin Film Prepared by PECVD: Fid-Bau Portal

Influence of Boron-doping on Electrical Properties of na-Si:H Thin Film Prepared by PECVD

Feng, R.-h. / Zhang, X.-w. / Han, G.-r.

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Influence of Boron-doping on Electrical Properties of na-Si:H Thin Film Prepared by PECVD

Feng, R.-h. / Zhang, X.-w. / Han, G.-r.

Influence of Boron-doping on Electrical Properties of na-Si:H Thin Film Prepared by PECVD

Feng, R.-h. / Zhang, X.-w. / Han, G.-r.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Influence of Boron-doping on Electrical Properties of na-Si:H Thin Film Prepared by PECVD

Contributors:

Feng, R.-h. (author) / Zhang, X.-w. (author) / Han, G.-r. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -HANGZHOU- ; 26 ; 226-228

Publication date:

2008-01-01

Size:

3 pages

ISSN:

1673-2812

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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