A platform for research: civil engineering, architecture and urbanism
Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing
Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing
Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing
Chiussi, S. (author) / Gontad, F. (author) / Rodriguez, R. (author) / Serra, C. (author) / Serra, J. (author) / Leon, B. (author) / Sulima, T. (author) / Hollt, L. (author) / Eisele, I. (author)
APPLIED SURFACE SCIENCE ; 254 ; 6030-6033
2008-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Excimer laser micromachining of TiN films from chromium and copper sacrificial layers
British Library Online Contents | 2002
|Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser
British Library Online Contents | 2005
|Excimer laser modification of thin AlN films
British Library Online Contents | 2005
|British Library Online Contents | 2004
|Interfacial processes in the Pd/a-Ge:H system
British Library Online Contents | 1993
|