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Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Harada, S. / Okamoto, M. / Yatsuo, T. / Adachi, K. / Suzuki, K. / Suzuki, S. / Fukuda, K. / Arai, K.

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Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Harada, S. / Okamoto, M. / Yatsuo, T. / Adachi, K. / Suzuki, K. / Suzuki, S. / Fukuda, K. / Arai, K.

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Harada, S. / Okamoto, M. / Yatsuo, T. / Adachi, K. / Suzuki, K. / Suzuki, S. / Fukuda, K. / Arai, K.

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Title:

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Contributors:

Harada, S. (author) / Okamoto, M. (author) / Yatsuo, T. (author) / Adachi, K. (author) / Suzuki, K. (author) / Suzuki, S. (author) / Fukuda, K. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1421-1424

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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