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Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion
Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion
Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion
Marcon, J. (author) / Merabet, A. (author)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 216-220
2008-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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