Amorphous stability of HfO2 based ternary and binary composition spread oxide films as alternative gate dielectrics

Hasegawa, K. / Ahmet, P. / Okazaki, N. et al. | British Library Online Contents | 2004

HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

Caymax, M. / Van Elshocht, S. / Houssa, M. et al. | British Library Online Contents | 2006

Study of charge carrier quantization in strained Si-nMOSFETs

Nguyen, C. D. / Pham, A. T. / Jungemann, C. et al. | British Library Online Contents | 2005

Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

Ray, S. K. / Mahapatra, R. / Maikap, S. et al. | British Library Online Contents | 2004

Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate

Maeng, W. J. / Oh, I. K. / Kim, W. H. et al. | British Library Online Contents | 2014