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The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Qin, Y. / Yan, H. / Li, F. / Qiao, L. / Liu, Q. / He, D.

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The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Qin, Y. / Yan, H. / Li, F. / Qiao, L. / Liu, Q. / He, D.

The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Qin, Y. / Yan, H. / Li, F. / Qiao, L. / Liu, Q. / He, D.

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Document information

Title:

The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

Contributors:

Qin, Y. (author) / Yan, H. (author) / Li, F. (author) / Qiao, L. (author) / Liu, Q. (author) / He, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 817-822

Publication date:

2010-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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