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Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
Watanabe, H. (author) / Kutsuki, K. (author) / Hideshima, I. (author) / Okamoto, G. (author) / Hosoi, T. (author) / Shimura, T. (author) / Miyazaki, S. / Tabata, H.
2011-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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