A platform for research: civil engineering, architecture and urbanism
First principles study of Si etching by CHF3 plasma source
First principles study of Si etching by CHF3 plasma source
First principles study of Si etching by CHF3 plasma source
Wang, W. (author) / Cha, P. R. (author) / Lee, S. h. (author) / Kim, G. (author) / Kim, M. J. (author) / Cho, K. (author)
APPLIED SURFACE SCIENCE ; 257 ; 8767-8771
2011-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
XPS analysis of Pb(Zr0.52Ti0.48)O3 thin film after dry-etching by CHF3 plasma
British Library Online Contents | 2000
|Prediction of profile surface roughness in CHF3/CF4 plasma using neural network
British Library Online Contents | 2004
|Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD
British Library Online Contents | 2002
|British Library Online Contents | 2013
|British Library Online Contents | 2013
|