Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications: Fid-Bau Portal

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Peyre, H. / Sun, J. / Guelfucci, J. / Juillaguet, S. / Hassan, J. / Henry, A. / Contreras, S. / Brosselard, P. / Camassel, J.

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Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Peyre, H. / Sun, J. / Guelfucci, J. / Juillaguet, S. / Hassan, J. / Henry, A. / Contreras, S. / Brosselard, P. / Camassel, J.

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Peyre, H. / Sun, J. / Guelfucci, J. / Juillaguet, S. / Hassan, J. / Henry, A. / Contreras, S. / Brosselard, P. / Camassel, J.

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Document information

Title:

Low Temperature Photoluminescence Investigation of 3-Inch SiC Wafers for Power Device Applications

Contributors:

Peyre, H. (author) / Sun, J. (author) / Guelfucci, J. (author) / Juillaguet, S. (author) / Hassan, J. (author) / Henry, A. (author) / Contreras, S. (author) / Brosselard, P. (author) / Camassel, J. (author) / Alquier, D.

Published in:

HeteroSiC & WASMPE 2011 ; 164-168

MATERIALS SCIENCE FORUM ; 711

Publication date:

2012-01-01

Size:

5 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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