Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds: Fid-Bau Portal

Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds

Ketata, K. / Koumetz, S. / Latry, O. / Ketata, M.

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Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds

Ketata, K. / Koumetz, S. / Latry, O. / Ketata, M.

Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds

Ketata, K. / Koumetz, S. / Latry, O. / Ketata, M.

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Order at Subito €

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Document information

Title:

Parametric investigations and simulations of ion beam etching and reactive ion etching mechanisms for GaAs compounds

Contributors:

Ketata, K. (author) / Koumetz, S. (author) / Latry, O. (author) / Ketata, M. (author) / Fornani, R.

Published in:

2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 383

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

Publication date:

1994-01-01

Size:

383 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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