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Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

Koh, S. / You, A. / Tou, T.

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Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

Koh, S. / You, A. / Tou, T.

Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

Koh, S. / You, A. / Tou, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Copper diffusivity in boron-doped silicon wafer measured by dynamic secondary ion mass spectrometry

Contributors:

Koh, S. (author) / You, A. (author) / Tou, T. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 178 ; 321-325

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Chen, X. / Zhu, J. / Yin, G. et al. | British Library Online Contents | 2006

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