Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs: Fid-Bau Portal

Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Moscatelli, F. / Poggi, A. / Solmi, S. / Nipoti, R. / Armigliato, A. / Belsito, L.

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Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Moscatelli, F. / Poggi, A. / Solmi, S. / Nipoti, R. / Armigliato, A. / Belsito, L.

Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Moscatelli, F. / Poggi, A. / Solmi, S. / Nipoti, R. / Armigliato, A. / Belsito, L.

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Title:

Nitridation of the SiO~2/SiC Interface by N^+ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

Contributors:

Moscatelli, F. (author) / Poggi, A. (author) / Solmi, S. (author) / Nipoti, R. (author) / Armigliato, A. (author) / Belsito, L. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G.

Published in:

Silicon Carbide and Related Materials 2009 ; 491-494

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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