Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress: Fid-Bau Portal

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. / Constant, A. / Godignon, P. / Martin-Horcajo, S. / Bosca, A. / Calle, F. / Berthou, M. / Millan, J.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. / Constant, A. / Godignon, P. / Martin-Horcajo, S. / Bosca, A. / Calle, F. / Berthou, M. / Millan, J.

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. / Constant, A. / Godignon, P. / Martin-Horcajo, S. / Bosca, A. / Calle, F. / Berthou, M. / Millan, J.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Contributors:

Tadjer, M.J. (author) / Constant, A. (author) / Godignon, P. (author) / Martin-Horcajo, S. (author) / Bosca, A. (author) / Calle, F. (author) / Berthou, M. (author) / Millan, J. (author) / Lebedev, A.A. / Davydov, S.Y.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 553-556

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Lelis, A. J. / Habersat, D. B. / Lopez, G. et al. | British Library Online Contents | 2006

Development of 4H-SiC MOSFETs with Phosphorus-Doped Gate Oxide

Okamoto, D. / Yano, H. / Hatayama, T. et al. | British Library Online Contents | 2012

Simulation of Segmented Double-Gate MOSFETs

Reichardt, A. / Varga, G. | British Library Online Contents | 2012

Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETs

Ariyoshi, K. / Harada, S. / Senzaki, J. et al. | British Library Online Contents | 2014

The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

Kim, J. / Jang, J. / Kim, K. et al. | British Library Online Contents | 2014