Epitaxial Si1-x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition: Fid-Bau Portal

Epitaxial Si1-x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

Nakahata, T. / Sugihara, K. / Furukawa, T. / Yamakawa, S. / Maruno, S. / Tokuda, Y. / Yamamoto, K. / Inagaki, T. / Kiyama, H.

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Epitaxial Si1-x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

Nakahata, T. / Sugihara, K. / Furukawa, T. / Yamakawa, S. / Maruno, S. / Tokuda, Y. / Yamamoto, K. / Inagaki, T. / Kiyama, H.

Epitaxial Si1-x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

Nakahata, T. / Sugihara, K. / Furukawa, T. / Yamakawa, S. / Maruno, S. / Tokuda, Y. / Yamamoto, K. / Inagaki, T. / Kiyama, H.

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Title:

Epitaxial Si1-x Gex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition

Contributors:

Nakahata, T. (author) / Sugihara, K. (author) / Furukawa, T. (author) / Yamakawa, S. (author) / Maruno, S. (author) / Tokuda, Y. (author) / Yamamoto, K. (author) / Inagaki, T. (author) / Kiyama, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 68 ; 171 - 174

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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