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Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Lv, H.J. / Geng, T. / Hu, G.Q.

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Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Lv, H.J. / Geng, T. / Hu, G.Q.

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Lv, H.J. / Geng, T. / Hu, G.Q.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

Similar titles

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Document information

Title:

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Contributors:

Lv, H.J. (author) / Geng, T. (author) / Hu, G.Q. (author) / Tang, F.

Published in:

Micro-Nano Technology XIV ; 471-476

KEY ENGINEERING MATERIALS ; 562/565

Publication date:

2013-01-01

Size:

6 pages

ISSN:

1013-9826

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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