50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor: Fid-Bau Portal

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Sun, Y.Q. / Feng, G. / Li, Z.Y. / Lv, L.P. / Luo, J.Y. / Wu, J.B. / Li, Y.Y. / Zhang, J.H.

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50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Sun, Y.Q. / Feng, G. / Li, Z.Y. / Lv, L.P. / Luo, J.Y. / Wu, J.B. / Li, Y.Y. / Zhang, J.H.

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Sun, Y.Q. / Feng, G. / Li, Z.Y. / Lv, L.P. / Luo, J.Y. / Wu, J.B. / Li, Y.Y. / Zhang, J.H.

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Title:

50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Contributors:

Sun, Y.Q. (author) / Feng, G. (author) / Li, Z.Y. (author) / Lv, L.P. (author) / Luo, J.Y. (author) / Wu, J.B. (author) / Li, Y.Y. (author) / Zhang, J.H. (author) / Okumura, H. / Harima, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 163-166

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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