10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor: Fid-Bau Portal

10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

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10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Dong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G.

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Title:

10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Contributors:

Dong, L. (author) / Sun, G.S. (author) / Yu, J. (author) / Yan, G.G. (author) / Zhao, W.S. (author) / Wang, L. (author) / Zhang, X.H. (author) / Li, X.G. (author) / Wang, Z.G. (author) / Lebedev, A.A.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 239-242

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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