Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor: Fid-Bau Portal

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Thomas, B. / Hansen, D.M. / Zhang, J. / Loboda, M.J. / Uchiyama, J. / Toth, T.J. / Chung, G. / Manning, I.C. / Quast, J.P. / Mueller, S.G.

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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Thomas, B. / Hansen, D.M. / Zhang, J. / Loboda, M.J. / Uchiyama, J. / Toth, T.J. / Chung, G. / Manning, I.C. / Quast, J.P. / Mueller, S.G.

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Thomas, B. / Hansen, D.M. / Zhang, J. / Loboda, M.J. / Uchiyama, J. / Toth, T.J. / Chung, G. / Manning, I.C. / Quast, J.P. / Mueller, S.G.

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Document information

Title:

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Contributors:

Thomas, B. (author) / Hansen, D.M. (author) / Zhang, J. (author) / Loboda, M.J. (author) / Uchiyama, J. (author) / Toth, T.J. (author) / Chung, G. (author) / Manning, I.C. (author) / Quast, J.P. (author) / Mueller, S.G. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 103-108

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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