Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor: Fid-Bau Portal

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor

Burk, A.A. / Tsvetkov, D. / O loughlin, M.J. / Ustin, S. / Garrett, L. / Powell, A.R. / Seaman, J. / Partin, N.

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Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor

Burk, A.A. / Tsvetkov, D. / O loughlin, M.J. / Ustin, S. / Garrett, L. / Powell, A.R. / Seaman, J. / Partin, N.

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor

Burk, A.A. / Tsvetkov, D. / O loughlin, M.J. / Ustin, S. / Garrett, L. / Powell, A.R. / Seaman, J. / Partin, N.

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Title:

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary Reactor

Contributors:

Burk, A.A. (author) / Tsvetkov, D. (author) / O loughlin, M.J. (author) / Ustin, S. (author) / Garrett, L. (author) / Powell, A.R. (author) / Seaman, J. (author) / Partin, N. (author) / Okumura, H. / Harima, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 113-116

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Burk, A.A. / Tsvetkov, D. / Barnhardt, D. et al. | British Library Online Contents | 2012

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50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor

Sun, Y.Q. / Feng, G. / Li, Z.Y. et al. | British Library Online Contents | 2014

10 x 100 mm 4H-SiC Epitaxial Growth by Warm-Wall Planetary Reactor

Dong, L. / Sun, G.S. / Yu, J. et al. | British Library Online Contents | 2013