Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition: Fid-Bau Portal

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Huang, L. Y. / Li, A. D. / Zhang, W. Q. / Li, H. / Xia, Y. D. / Wu, D.

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Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Huang, L. Y. / Li, A. D. / Zhang, W. Q. / Li, H. / Xia, Y. D. / Wu, D.

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Huang, L. Y. / Li, A. D. / Zhang, W. Q. / Li, H. / Xia, Y. D. / Wu, D.

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Title:

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Contributors:

Huang, L. Y. (author) / Li, A. D. (author) / Zhang, W. Q. (author) / Li, H. (author) / Xia, Y. D. (author) / Wu, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 2496-2499

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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