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A platform for research: civil engineering, architecture and urbanism
Silicon nitride ceramic substrate and preparation method thereof
The invention provides a preparation method of a silicon nitride ceramic substrate. The preparation method of the silicon nitride ceramic substrate comprises the steps that an inorganic component and an organic component are mixed to obtain slurry, the inorganic component comprises rod-shaped beta-Si3N4 seed crystals and alpha-Si3N4 powder, the organic component comprises an organic solvent, and the average length of the rod-shaped beta-Si3N4 seed crystals is L; the slurry is subjected to tape casting treatment through tape casting equipment, a tape casting blank sheet is obtained, the height of a scraper of the tape casting equipment is H, and H and L meet the condition that H is larger than or equal to 2L and smaller than or equal to 50L; the silicon nitride ceramic substrate comprises rod-like beta-Si3N4 crystal grains, the ratio of the rod-like beta-Si3N4 crystal grains of which the included angle between the length direction and the plane direction of the silicon nitride ceramic substrate is within a preset angle range is larger than or equal to 70%, and the preset angle range is smaller than or equal to 60 degrees. The invention also provides a silicon nitride ceramic substrate.
本申请提供一种氮化硅陶瓷基板的制备方法。所述氮化硅陶瓷基板的制备方法包括：将无机成分与有机成分混合得到浆料，无机成分包括棒状β‑Si3N4籽晶及α‑Si3N4粉体，有机成分包括有机溶剂，棒状β‑Si3N4籽晶的平均长度为L；通过流延设备对浆料进行流延处理，得到流延胚片，其中，流延设备的刮刀的高度为H，H与L满足2L≤H≤50L；对流延胚片进行烧结处理，制备得到氮化硅陶瓷基板，该氮化硅陶瓷基板包括棒状β‑Si3N4晶粒，其中，长度方向与氮化硅陶瓷基板的平面方向的夹角位于预设角度范围内的棒状β‑Si3N4晶粒占比大于或等于70％，预设角度范围为小于或等于60°。本申请还提供氮化硅陶瓷基板。
Silicon nitride ceramic substrate and preparation method thereof
The invention provides a preparation method of a silicon nitride ceramic substrate. The preparation method of the silicon nitride ceramic substrate comprises the steps that an inorganic component and an organic component are mixed to obtain slurry, the inorganic component comprises rod-shaped beta-Si3N4 seed crystals and alpha-Si3N4 powder, the organic component comprises an organic solvent, and the average length of the rod-shaped beta-Si3N4 seed crystals is L; the slurry is subjected to tape casting treatment through tape casting equipment, a tape casting blank sheet is obtained, the height of a scraper of the tape casting equipment is H, and H and L meet the condition that H is larger than or equal to 2L and smaller than or equal to 50L; the silicon nitride ceramic substrate comprises rod-like beta-Si3N4 crystal grains, the ratio of the rod-like beta-Si3N4 crystal grains of which the included angle between the length direction and the plane direction of the silicon nitride ceramic substrate is within a preset angle range is larger than or equal to 70%, and the preset angle range is smaller than or equal to 60 degrees. The invention also provides a silicon nitride ceramic substrate.
本申请提供一种氮化硅陶瓷基板的制备方法。所述氮化硅陶瓷基板的制备方法包括：将无机成分与有机成分混合得到浆料，无机成分包括棒状β‑Si3N4籽晶及α‑Si3N4粉体，有机成分包括有机溶剂，棒状β‑Si3N4籽晶的平均长度为L；通过流延设备对浆料进行流延处理，得到流延胚片，其中，流延设备的刮刀的高度为H，H与L满足2L≤H≤50L；对流延胚片进行烧结处理，制备得到氮化硅陶瓷基板，该氮化硅陶瓷基板包括棒状β‑Si3N4晶粒，其中，长度方向与氮化硅陶瓷基板的平面方向的夹角位于预设角度范围内的棒状β‑Si3N4晶粒占比大于或等于70％，预设角度范围为小于或等于60°。本申请还提供氮化硅陶瓷基板。
Silicon nitride ceramic substrate and preparation method thereof
氮化硅陶瓷基板及其制备方法
LIN XINPING (author) / JIANG PINYI (author) / YANG WEIQIANG (author) / WU WEIPENG (author)
2024-04-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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