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Silicon nitride ceramic substrate and preparation method thereof
The invention discloses a preparation method of a silicon nitride ceramic substrate. The preparation method comprises the following steps: mixing and ball-milling ceramic powder, a solvent, a binder and a surfactant to prepare ceramic slurry with solid content of 70-80 wt%, wherein the ceramic powder comprises silicon nitride powder and a sintering aid, and the mass fraction of the silicon nitride powder in the ceramic powder is 88-94 wt%; carrying out tape casting on the ceramic slurry to obtain a silicon nitride blank plate; carrying out glue discharging treatment on the silicon nitride blank plate in an air environment at a glue discharging temperature of 650-850 DEG C, wherein the heat preservation time ranges from 12 h to 24 h; and sintering the glue-discharged silicon nitride blank plate in a protective atmosphere at the temperature of 1950-2000 DEG C to obtain the silicon nitride ceramic. The preparation method is high in production efficiency, high in yield and low in cost, and the prepared silicon nitride ceramic substrate is high in heat conductivity, high in strength, good in precision and flexible in size range.
本发明公开了一种氮化硅陶瓷基板的制备方法，包括以下步骤：将陶瓷粉体、溶剂、粘结剂、表面活性剂混合球磨，制备固含量为70～80wt％的陶瓷浆料；其中，所述陶瓷粉体包括氮化硅粉体和烧结助剂，所述陶瓷粉体中氮化硅粉体的质量分数为88～94wt％；将所述陶瓷浆料进行流延成型得到氮化硅坯板；将所述氮化硅坯板在空气环境中进行排胶处理，排胶温度为650～850℃，保温时间为12～24h；将排胶后的氮化硅坯板在保护气氛中、1950～2000℃下烧结，即得。本发明的制备方法生产效率高、成品率高、成本低，制得的氮化硅陶瓷基板热导率高、强度高，精度好，尺寸范围灵活。
Silicon nitride ceramic substrate and preparation method thereof
The invention discloses a preparation method of a silicon nitride ceramic substrate. The preparation method comprises the following steps: mixing and ball-milling ceramic powder, a solvent, a binder and a surfactant to prepare ceramic slurry with solid content of 70-80 wt%, wherein the ceramic powder comprises silicon nitride powder and a sintering aid, and the mass fraction of the silicon nitride powder in the ceramic powder is 88-94 wt%; carrying out tape casting on the ceramic slurry to obtain a silicon nitride blank plate; carrying out glue discharging treatment on the silicon nitride blank plate in an air environment at a glue discharging temperature of 650-850 DEG C, wherein the heat preservation time ranges from 12 h to 24 h; and sintering the glue-discharged silicon nitride blank plate in a protective atmosphere at the temperature of 1950-2000 DEG C to obtain the silicon nitride ceramic. The preparation method is high in production efficiency, high in yield and low in cost, and the prepared silicon nitride ceramic substrate is high in heat conductivity, high in strength, good in precision and flexible in size range.
本发明公开了一种氮化硅陶瓷基板的制备方法，包括以下步骤：将陶瓷粉体、溶剂、粘结剂、表面活性剂混合球磨，制备固含量为70～80wt％的陶瓷浆料；其中，所述陶瓷粉体包括氮化硅粉体和烧结助剂，所述陶瓷粉体中氮化硅粉体的质量分数为88～94wt％；将所述陶瓷浆料进行流延成型得到氮化硅坯板；将所述氮化硅坯板在空气环境中进行排胶处理，排胶温度为650～850℃，保温时间为12～24h；将排胶后的氮化硅坯板在保护气氛中、1950～2000℃下烧结，即得。本发明的制备方法生产效率高、成品率高、成本低，制得的氮化硅陶瓷基板热导率高、强度高，精度好，尺寸范围灵活。
Silicon nitride ceramic substrate and preparation method thereof
一种氮化硅陶瓷基板及其制备方法
LI BIN (author) / CHEN BO (author) / WEI ZHONGHUA (author) / ZHANG WEIRU (author) / WANG ZICHENG (author) / NIU AIXIN (author)
2021-11-09
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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