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Silicon nitride ceramic substrate and preparation method thereof
The invention discloses a silicon nitride ceramic substrate and a preparation method thereof. The preparation method comprises the steps of S1, adding ingredients and a sintering aid into a silicon nitride backing material according to a first preset weight ratio to form a mixed backing material; S2, adding a solvent according to a second preset weight ratio, and carrying out ball-milling mixing at the same time; S3, performing compression molding on the ball-milled material in a mold; and S4, sintering the pressed and molded material to obtain the silicon nitride ceramic substrate. The silicon nitride ceramic substrate has high thermal conductivity, a thermal expansion coefficient similar to that of single crystal Si, and good electrical insulation and mechanical properties. The silicon nitride ceramic substrate has the prominent characteristics that the thickness can be 0.28-0.34 mm, the bending strength is higher, the mechanical property is good, the substrate is not easy to break and deform, and the side length of the substrate is 32-200 mm.
本发明公开了一种氮化硅陶瓷基板及其制备方法，包括步骤：S1、在氮化硅底料中按照第一预设重量的比例加入配料及助烧剂形成混合底料；S2、按照第二预设重量的比例加溶剂并同时进行球磨混合；S3、将球磨后的材料在模具中进行压制成型；S4、将压制成型后的材料进行烧结得到氮化硅陶瓷基板。具有热导率高，与单晶Si相近的热膨胀系数、电绝缘及机械性能良好。较突出特点是氮化硅基板的厚度可以做到0.28‑0.34mm，并且弯曲强度较高，机械性能好，不易折断变形，基板尺寸边长32‑200mm。
Silicon nitride ceramic substrate and preparation method thereof
The invention discloses a silicon nitride ceramic substrate and a preparation method thereof. The preparation method comprises the steps of S1, adding ingredients and a sintering aid into a silicon nitride backing material according to a first preset weight ratio to form a mixed backing material; S2, adding a solvent according to a second preset weight ratio, and carrying out ball-milling mixing at the same time; S3, performing compression molding on the ball-milled material in a mold; and S4, sintering the pressed and molded material to obtain the silicon nitride ceramic substrate. The silicon nitride ceramic substrate has high thermal conductivity, a thermal expansion coefficient similar to that of single crystal Si, and good electrical insulation and mechanical properties. The silicon nitride ceramic substrate has the prominent characteristics that the thickness can be 0.28-0.34 mm, the bending strength is higher, the mechanical property is good, the substrate is not easy to break and deform, and the side length of the substrate is 32-200 mm.
本发明公开了一种氮化硅陶瓷基板及其制备方法，包括步骤：S1、在氮化硅底料中按照第一预设重量的比例加入配料及助烧剂形成混合底料；S2、按照第二预设重量的比例加溶剂并同时进行球磨混合；S3、将球磨后的材料在模具中进行压制成型；S4、将压制成型后的材料进行烧结得到氮化硅陶瓷基板。具有热导率高，与单晶Si相近的热膨胀系数、电绝缘及机械性能良好。较突出特点是氮化硅基板的厚度可以做到0.28‑0.34mm，并且弯曲强度较高，机械性能好，不易折断变形，基板尺寸边长32‑200mm。
Silicon nitride ceramic substrate and preparation method thereof
一种氮化硅陶瓷基板及其制备方法
TIAN XIN (author) / XU TAO (author) / NI SHIJUN (author) / YI HENGBIN (author) / XI KEBO (author) / CHANG YANJIE (author)
2021-08-10
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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