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MGO SINTERED BODY SPUTTERING TARGET
A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
MGO SINTERED BODY SPUTTERING TARGET
A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0° to 1° is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0° to 2° is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.
MGO SINTERED BODY SPUTTERING TARGET
MGO-SINTERKÖRPER-SPUTTERTARGET
CIBLE DE PULVÉRISATION CATHODIQUE DE TYPE CORPS FRITTÉ EN MGO
SHIBUYA YOSHITAKA (author) / NARITA SATOYASU (author) / KAJITA HIROKI (author)
2023-04-26
Patent
Electronic Resource
English
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