A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To reduce a polishing amount at a target polishing time by removing in-plane color unevenness on a target surface; to improve productivity by shortening a tact time; and to improve a yield.SOLUTION: In a sputtering target including indium oxide and zinc oxide as main components, and containing a hexagonal crystal layer compound expressed as InO(ZnO)(in the formula, m is an integer of 2-7), the content of Sn is 20,000 ppm or lower and higher than 2,000 ppm, a difference Δb* value between the maximum chromaticity and the minimum chromaticity on a surface or on a plane cut optionally is 0-5, and an average crystal grain size is 2 μm-10 μm.SELECTED DRAWING: None
【課題】ターゲット表面の面内の色ムラをなくすことで、ターゲット研磨時の研磨量を低減させ、製造のタクトタイムを短くし生産性を上げるとともに、歩留りを向上させる【解決手段】酸化インジウム及び酸化亜鉛を主成分とし、Ｉｎ２Ｏ３（ＺｎＯ）ｍ（式中、ｍ＝２〜７の整数）で表される六方晶層状化合物を含有し、Ｓｎの含有量が２０００ｐｐｍより多く２００００ｐｐｍ以下であり、表面又は任意に切断した面における最大色度と最小色度の差Δｂ＊値が、０〜５であり、平均結晶粒径が２μｍ〜１０μｍであるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
PROBLEM TO BE SOLVED: To reduce a polishing amount at a target polishing time by removing in-plane color unevenness on a target surface; to improve productivity by shortening a tact time; and to improve a yield.SOLUTION: In a sputtering target including indium oxide and zinc oxide as main components, and containing a hexagonal crystal layer compound expressed as InO(ZnO)(in the formula, m is an integer of 2-7), the content of Sn is 20,000 ppm or lower and higher than 2,000 ppm, a difference Δb* value between the maximum chromaticity and the minimum chromaticity on a surface or on a plane cut optionally is 0-5, and an average crystal grain size is 2 μm-10 μm.SELECTED DRAWING: None
【課題】ターゲット表面の面内の色ムラをなくすことで、ターゲット研磨時の研磨量を低減させ、製造のタクトタイムを短くし生産性を上げるとともに、歩留りを向上させる【解決手段】酸化インジウム及び酸化亜鉛を主成分とし、Ｉｎ２Ｏ３（ＺｎＯ）ｍ（式中、ｍ＝２〜７の整数）で表される六方晶層状化合物を含有し、Ｓｎの含有量が２０００ｐｐｍより多く２００００ｐｐｍ以下であり、表面又は任意に切断した面における最大色度と最小色度の差Δｂ＊値が、０〜５であり、平均結晶粒径が２μｍ〜１０μｍであるスパッタリングターゲット。【選択図】なし
SPUTTERING TARGET AND PRODUCTION METHOD THEREOF
スパッタリングターゲット及びその製造方法
NISHIMURA ASAMI (author) / OYAMA MASATSUGU (author)
2017-01-19
Patent
Electronic Resource
Japanese
SPUTTERING TARGET AND SPUTTERING TARGET PRODUCTION METHOD
| European Patent Office | 2020