A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
To improve a yield of a production process by reducing the occurrence of arcing in the production process.SOLUTION: A sputtering target includes a plurality of target members each of which is composed of ITO (Indium-Tin-Oxide) or IZO (Indium-Zinc-Oxide) and joined to a substrate made of metal through a joining material made of low melting point metal having a melting point of 300°C or lower. Each of the plurality of the target members is hollow and cylindrical and has an outer surface to be sputtered having a surface roughness (Ra) of 0.5 μm or less. When the target members are joined to the substrate so as to surround the outer circumferential surface of the substrate, each of the target members has a circular surface opposite to a circular surface of the adjacent target member with a distance of 0.2 mm or more and 1.0 mm or less between the target member and the adjacent target member, the circular surface has a surface roughness (Ra) of 0.05 μm or more and 0.4 μm or less.SELECTED DRAWING: Figure 1
【課題】製造プロセス中のアーキングの発生を低減させ、製造プロセスの歩留りを向上させることを目的とする。【解決手段】スパッタリングターゲットは、融点が３００℃以下の低融点金属で構成される接合材を介して金属で構成される基材に接合された、ＩＴＯ（Ｉｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ）又はＩＺＯ（Ｉｎｄｉｕｍ−Ｚｉｎｃ−Ｏｘｉｄｅ）で構成される複数のターゲット部材を含み、前記複数のターゲット部材は、中空の円筒形状であると共にスパッタリングされる外側表面の表面粗さ（Ｒａ）が０．５μｍ以下であり、かつ前記基材に当該基材の外周面を囲むように接合された際にそれぞれ隣接するターゲット部材と０．２ｍｍ以上１．０ｍｍ以下の間隔を置いて対向する円形面を有し、前記円形面における表面粗さ（Ｒａ）が０．０５μｍ以上０．４μｍ以下であることを特徴とする。【選択図】図１
SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
To improve a yield of a production process by reducing the occurrence of arcing in the production process.SOLUTION: A sputtering target includes a plurality of target members each of which is composed of ITO (Indium-Tin-Oxide) or IZO (Indium-Zinc-Oxide) and joined to a substrate made of metal through a joining material made of low melting point metal having a melting point of 300°C or lower. Each of the plurality of the target members is hollow and cylindrical and has an outer surface to be sputtered having a surface roughness (Ra) of 0.5 μm or less. When the target members are joined to the substrate so as to surround the outer circumferential surface of the substrate, each of the target members has a circular surface opposite to a circular surface of the adjacent target member with a distance of 0.2 mm or more and 1.0 mm or less between the target member and the adjacent target member, the circular surface has a surface roughness (Ra) of 0.05 μm or more and 0.4 μm or less.SELECTED DRAWING: Figure 1
【課題】製造プロセス中のアーキングの発生を低減させ、製造プロセスの歩留りを向上させることを目的とする。【解決手段】スパッタリングターゲットは、融点が３００℃以下の低融点金属で構成される接合材を介して金属で構成される基材に接合された、ＩＴＯ（Ｉｎｄｉｕｍ−Ｔｉｎ−Ｏｘｉｄｅ）又はＩＺＯ（Ｉｎｄｉｕｍ−Ｚｉｎｃ−Ｏｘｉｄｅ）で構成される複数のターゲット部材を含み、前記複数のターゲット部材は、中空の円筒形状であると共にスパッタリングされる外側表面の表面粗さ（Ｒａ）が０．５μｍ以下であり、かつ前記基材に当該基材の外周面を囲むように接合された際にそれぞれ隣接するターゲット部材と０．２ｍｍ以上１．０ｍｍ以下の間隔を置いて対向する円形面を有し、前記円形面における表面粗さ（Ｒａ）が０．０５μｍ以上０．４μｍ以下であることを特徴とする。【選択図】図１
SPUTTERING TARGET, AND PRODUCTION METHOD THEREOF
スパッタリングターゲット及びその製造方法
OSADA KOZO (author) / KAJIYAMA JUN (author)
2020-07-27
Patent
Electronic Resource
Japanese
SPUTTERING TARGET AND SPUTTERING TARGET PRODUCTION METHOD
| European Patent Office | 2020