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A platform for research: civil engineering, architecture and urbanism
COPPER/CERAMIC ASSEMBLY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
To provide: a copper/ceramic assembly which is capable of suppressing the generation of cracks of a ceramic member even if a severe cold heat cycle is loaded, and also which is excellent in migration resistance; an insulated circuit board; a method for producing a copper/ceramic assembly; and a method for producing an insulated circuit board.SOLUTION: There is provided a copper/ceramic assembly in which a copper member 12 comprising copper or a copper alloy is bonded to a ceramic member 11 comprising a nitrogen-containing ceramic. A Mg solid solution layer in which Mg is solid-solved in a Cu matrix phase is formed at a bonding interface between the copper member 12 and the ceramic member 11, and an active metal nitride layer 41 containing nitrides of one or two or more active metals selected from among Ti, Zr, Nb and Hf is formed on the ceramic member 11 side of the bonding interface. The thickness of the active metal nitride layer 41 is within the range of 0.05 μm or more and 1.2 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であってもセラミックス部材の割れの発生を抑制することができるとともに、耐マイグレーション性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材１２と、窒素含有セラミックスからなるセラミックス部材１１とが接合されてなる銅／セラミックス接合体であって、銅部材１２とセラミックス部材１１との接合界面においては、Ｃｕの母相中にＭｇが固溶したＭｇ固溶層が形成されるとともに、セラミックス部材１１側に、Ｔｉ，Ｚｒ，Ｎｂ，Ｈｆから選択される１種又は２種以上の活性金属の窒化物を含む活性金属窒化物層４１が形成されており、この活性金属窒化物層４１の厚さが０．０５μｍ以上１．２μｍ以下の範囲内とされている。【選択図】図２
COPPER/CERAMIC ASSEMBLY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
To provide: a copper/ceramic assembly which is capable of suppressing the generation of cracks of a ceramic member even if a severe cold heat cycle is loaded, and also which is excellent in migration resistance; an insulated circuit board; a method for producing a copper/ceramic assembly; and a method for producing an insulated circuit board.SOLUTION: There is provided a copper/ceramic assembly in which a copper member 12 comprising copper or a copper alloy is bonded to a ceramic member 11 comprising a nitrogen-containing ceramic. A Mg solid solution layer in which Mg is solid-solved in a Cu matrix phase is formed at a bonding interface between the copper member 12 and the ceramic member 11, and an active metal nitride layer 41 containing nitrides of one or two or more active metals selected from among Ti, Zr, Nb and Hf is formed on the ceramic member 11 side of the bonding interface. The thickness of the active metal nitride layer 41 is within the range of 0.05 μm or more and 1.2 μm or less.SELECTED DRAWING: Figure 2
【課題】厳しい冷熱サイクルを負荷した場合であってもセラミックス部材の割れの発生を抑制することができるとともに、耐マイグレーション性に優れた銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法を提供する。【解決手段】銅又は銅合金からなる銅部材１２と、窒素含有セラミックスからなるセラミックス部材１１とが接合されてなる銅／セラミックス接合体であって、銅部材１２とセラミックス部材１１との接合界面においては、Ｃｕの母相中にＭｇが固溶したＭｇ固溶層が形成されるとともに、セラミックス部材１１側に、Ｔｉ，Ｚｒ，Ｎｂ，Ｈｆから選択される１種又は２種以上の活性金属の窒化物を含む活性金属窒化物層４１が形成されており、この活性金属窒化物層４１の厚さが０．０５μｍ以上１．２μｍ以下の範囲内とされている。【選択図】図２
COPPER/CERAMIC ASSEMBLY, INSULATED CIRCUIT BOARD, METHOD FOR PRODUCING COPPER/CERAMIC ASSEMBLY, AND METHOD FOR PRODUCING INSULATED CIRCUIT BOARD
銅／セラミックス接合体、絶縁回路基板、及び、銅／セラミックス接合体の製造方法、絶縁回路基板の製造方法
TERASAKI NOBUYUKI (author)
2021-05-06
Patent
Electronic Resource
Japanese
| European Patent Office | 2021
| European Patent Office | 2023
| European Patent Office | 2023
| European Patent Office | 2021
| European Patent Office | 2021