Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Excimer-laser-induced etching of silicon in chlorine atmosphere at a wavelength of 248 nm
Excimer-laser-induced etching of silicon in chlorine atmosphere at a wavelength of 248 nm
Excimer-laser-induced etching of silicon in chlorine atmosphere at a wavelength of 248 nm
Jiang, W. (Autor:in) / Baumgaertner, H. (Autor:in) / Eisele, I. (Autor:in) / Dieleman, J. / Biermann, U. K. P. / Hess, P.
01.01.1995
564 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Excimer laser induced chlorine etching of Si patterns for microelectronics
British Library Online Contents | 1996
|Excimer laser-assisted etching of silicon in chlorine: adsorption and desorption
British Library Online Contents | 1995
|Excimer laser etching of GaAs, Al~xGa~1~-~xAs and CuInSe~2 in chlorine atmosphere
British Library Online Contents | 1998
|British Library Online Contents | 2008
|Excimer-laser induced chemical etching of transition metals
British Library Online Contents | 2000
|