Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Ion-implantation issues in the formation of shallow junctions in germanium
Ion-implantation issues in the formation of shallow junctions in germanium
Ion-implantation issues in the formation of shallow junctions in germanium
Simoen, E. (Autor:in) / Satta, A. (Autor:in) / D'Amore, A. (Autor:in) / Janssens, T. (Autor:in) / Clarysse, T. (Autor:in) / Martens, K. (Autor:in) / De Jaeger, B. (Autor:in) / Benedetti, A. (Autor:in) / Hoflijk, I. (Autor:in) / Brijs, B. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 634-639
01.01.2006
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Plasma immersion ion implantation for shallow junctions in silicon
British Library Online Contents | 1999
|Studies of ultra shallow n+-p junctions formed by low-energy As-implantation
British Library Online Contents | 2004
|Impact of germanium surface passivation on the leakage current of shallow planar p-n junctions
British Library Online Contents | 2006
|Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)
British Library Online Contents | 2009
|X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions
British Library Online Contents | 2009
|