1836 V, 4.7 mOmegaΩcm^2 High Power 4H-SiC Bipolar Junction Transistor

Zhang, J. H. / Wu, J. / Alexandrov, P. et al. | British Library Online Contents | 2006

Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures

Zhang, N. / Rao, Y. / Xu, N. et al. | British Library Online Contents | 2014

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

Lawson, K. / Alvarez, G. / Bayne, S.B. et al. | British Library Online Contents | 2012

Development of 1200 V, 3.7 m Omega -cm^2 4H-SiC DMOSFETs for Advanced Power Applications

Ryu, S.H. / Cheng, L. / Dhar, S. et al. | British Library Online Contents | 2012

1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications

Veliadis, V. / McNutt, T. / McCoy, M. et al. | British Library Online Contents | 2009