Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Evaluation of Schottky barrier source/drain contact on gate-all-around polycrystalline silicon nanowire MOSFET
Evaluation of Schottky barrier source/drain contact on gate-all-around polycrystalline silicon nanowire MOSFET
Evaluation of Schottky barrier source/drain contact on gate-all-around polycrystalline silicon nanowire MOSFET
Ho, Ching-Yuan (Autor:in) / Chang, Yew-Jen (Autor:in)
Materials science in semiconductor processing ; 61 ; 150-155
01.01.2017
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering
British Library Online Contents | 2005
|Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
British Library Online Contents | 2009
|Schottky Barrier 3C-SiC Nanowire Field Effect Transistor
British Library Online Contents | 2011
|British Library Online Contents | 2016
|