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Method for annealing of aluminium nitride wafer
Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
Method for annealing of aluminium nitride wafer
Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
Method for annealing of aluminium nitride wafer
Verfahren zum Glühen eines Aluminiumnitrid-Wafers
Procédé de recuit de tranche de nitrure d'aluminium
MORGAN KENNETH E (Autor:in) / SCHOWALTER LEO J (Autor:in) / SLACK GLEN A (Autor:in)
30.10.2019
Patent
Elektronische Ressource
Englisch
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