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WAFER SUPPORT
A wafer support 28 includes a base material 14 including at least boron nitride as a machinable ceramic, a protective layer 16 covering a surface 14a of the base material, and a conductive member 18 placed at least partially inside the base material 14. The base material includes a first layer 14b and a second layer 14c between the first layer 14b and the protective layer 16. The protective layer 16 includes a material that is less corrodible by plasma than the base material 14. The following formula (1) is satisfied: 5≤W1−W2≤35 where the proportion of boron nitride contained in the first layer 14b is represented by W1 [mass%] and the proportion of boron nitride contained in the second layer 14c is represented by W2 [mass%].
WAFER SUPPORT
A wafer support 28 includes a base material 14 including at least boron nitride as a machinable ceramic, a protective layer 16 covering a surface 14a of the base material, and a conductive member 18 placed at least partially inside the base material 14. The base material includes a first layer 14b and a second layer 14c between the first layer 14b and the protective layer 16. The protective layer 16 includes a material that is less corrodible by plasma than the base material 14. The following formula (1) is satisfied: 5≤W1−W2≤35 where the proportion of boron nitride contained in the first layer 14b is represented by W1 [mass%] and the proportion of boron nitride contained in the second layer 14c is represented by W2 [mass%].
WAFER SUPPORT
WAFERTRÄGER
SUPPORT DE TRANCHE
YAMAGISHI WATARU (Autor:in) / MORI KAZUMASA (Autor:in) / KOUNO HITOSHI (Autor:in) / ETO SHUNICHI (Autor:in)
19.02.2025
Patent
Elektronische Ressource
Englisch