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Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

Levy, R. A. / Lin, X. / Grow, J. M. / Boeglin, H. J. / Shalvoy, R.

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Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

Levy, R. A. / Lin, X. / Grow, J. M. / Boeglin, H. J. / Shalvoy, R.

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

Levy, R. A. / Lin, X. / Grow, J. M. / Boeglin, H. J. / Shalvoy, R.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Low pressure chemical vapor deposition of silicon nitride using the environmentally friendly tris(dimethylamino)silane precursor

Contributors:

Levy, R. A. (author) / Lin, X. (author) / Grow, J. M. (author) / Boeglin, H. J. (author) / Shalvoy, R. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 11 ; 1483-1488

Publication date:

1996-01-01

Size:

6 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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